- Technical Parameter
Product Attributes | |
---|---|
Categories | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
Series | - |
Packaging | Tape & Reel (TR) |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Power - Max | 246mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Additional Resources | |
---|---|
Standard Package | 3,000 |
Other Names | MMUN2211LT1GOS MMUN2211LT1GOS-ND MMUN2211LT1GOSTR |
Datasheet | |
---|---|
MMUN2211LT1G.pdf |
- Commodity Description
MMUN2211LT1G by ON Design and production,in Chip1Cloud Spot sales,And can pass Chip1Cloud Purchasing。MMUN2211LT1G Price reference $ 0.0109。MMUN2211LT1G - Categories :Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased
;Series :-;Packaging :Tape & Reel (TR);Part Status :Active;Transistor Type :NPN - Pre-Biased;Current - Collector (Ic) (Max) :100mA;Voltage - Collector Emitter Breakdown (Max) :50V;Resistor - Base (R1) :10 kOhms;Resistor - Emitter Base (R2) :10 kOhms;DC Current Gain (hFE) (Min) @ Ic, Vce :35 @ 5mA, 10V;Vce Saturation (Max) @ Ib, Ic :250mV @ 300µA, 10mA;Current - Collector Cutoff (Max) :500nA;Power - Max :246mW;Mounting Type :Surface Mount;Package / Case :TO-236-3, SC-59, SOT-23-3;Supplier Device Package :SOT-23-3 (TO-236);Standard Package :3,000;Other Names :MMUN2211LT1GOS、MMUN2211LT1GOS-ND、MMUN2211LT1GOSTR、;。You can download MMUN2211LT1G Chinese information、Pin map、DatasheetData sheet function specification,In the information MMUN2211LT1G Detailed pin diagram and function application circuit diagram voltage and usage method and tutorial
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